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epitaxial-deposition temperature

См. также в других словарях:

  • Sputter deposition — is a physical vapor deposition (PVD) method of depositing thin films by sputtering, that is ejecting, material from a target, that is source, which then deposits onto a substrate, such as a silicon wafer. Resputtering is re emission of the… …   Wikipedia

  • Chemical vapor deposition — DC plasma (violet) enhances the growth of carbon nanotubes in this laboratory scale PECVD apparatus. Chemical vapor deposition (CVD) is a chemical process used to produce high purity, high performance solid materials. The process is often used in …   Wikipedia

  • Combustion chemical vapor deposition — (CCVD) is a chemical process by which thin film coatings are deposited onto substrates in the open atmosphere. Contents 1 History 2 Principles and procedure 3 Remote combustion chemical v …   Wikipedia

  • materials science — the study of the characteristics and uses of various materials, as glass, plastics, and metals. [1960 65] * * * Study of the properties of solid materials and how those properties are determined by the material s composition and structure, both… …   Universalium

  • Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which …   Wikipedia

  • Microelectromechanical system oscillator — Microelectromechanical system (MEMS) oscillators are timing devices that generate highly stable reference frequencies. These reference frequencies are used to sequence electronic systems, manage data transfer, define radio frequencies, and… …   Wikipedia

  • Tunnel magnetoresistance — Magnetic tunnel junction (schematic) The Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in magnetic tunnel junctions (MTJs). This is a component consisting of two ferromagnets separated by a thin insulator. If the… …   Wikipedia

  • Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… …   Wikipedia

  • Synthetic diamond — Synthetic diamonds of various colors grown by the high pressure high temperature technique Synthetic diamond is diamond produced in a technological process; as opposed to natural diamond, which is created in geological processes. Synthetic… …   Wikipedia

  • Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… …   Wikipedia

  • Zinc oxide — Other names Zinc white Calamine Identifiers …   Wikipedia

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